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| 1N5817 | Schottky barrier rectifier. Maximum recurrent peak reverse voltage 20 V. Maximum average forward rectified current 1.0 A. | BYTES | N/A | 2 | -65°C | 125°C | 1N5817 datasheet (152K) |
| 1N5817 | Schottky barrier rectifier. Max repetitive peak reverse voltage 20 V. Max average forward rectified current 1.0 A. | CNEL | N/A | 2 | -65°C | 125°C | 1N5817 datasheet (122K) |
| 1N5817 | Schottky barrier rectifier | DCCOM | N/A | 2 | -65°C | 175°C | 1N5817 datasheet (387K) |
| 1N5817 | Si Schottky rectifier | Diotec-Elektronische | N/A | 2 | -50°C | 150°C | 1N5817 datasheet (37K) |
| 1N5817 | 20V; 1.0A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application | DIODS | DPAK | 2 | -65°C | 125°C | 1N5817 datasheet (44K) |
| 1N5817 | 20 V, 1A schottky barrier rectifier | FAGOR | N/A | 2 | -65°C | 125°C | 1N5817 datasheet (38K) |
| 1N5817 | 1.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | N/A | - | N/A | N/A | 1N5817 datasheet (36K) |
| 1N5817 | 20 V, 1 A schottky barrier rectifier | FORMO | N/A | 2 | -65°C | 125°C | 1N5817 datasheet (32K) |
| 1N5817 | Shottky Barrier Rectifier | General-Semiconductor | N/A | - | N/A | N/A | 1N5817 datasheet (44K) |
| 1N5817 | 20 V, 1 A, Schottky barrier rectifier | GODAR | DO | 2 | -65°C | 125°C | 1N5817 datasheet (188K) |