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| 1N5819 | Schottky barrier diode. Repetitive peak reverse voltage 40 V. | Philips-Semiconductors | SOD81 | 2 | 0°C | 125°C | 1N5819 datasheet (57K) |
| 1N5819 | Schottky barrier rectifier. VRRM = 40V. VRMS = 28V. VDC = 40V. Current 1.0A | RECTR | N/A | 2 | -65°C | 125°C | 1N5819 datasheet (23K) |
| 1N5819 | Schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Max average forward rectified current 1.0 A. | SSE | N/A | 2 | -65°C | 125°C | 1N5819 datasheet (13K) |
| 1N5819 | LOW DROP POWER SCHOTTKY RECTIFIER | SGS-Thomson-Microelectronics | N/A | - | N/A | N/A | 1N5819 datasheet (61K) |
| 1N5819 | LOW DROP POWER SCHOTTKY RECTIFIER | SGS-Thomson-Microelectronics | N/A | - | N/A | N/A | 1N5819 datasheet (61K) |
| 1N5819 | 40 V, 1.0 A schottky barrier rectifier | SURGE | DO | 2 | -50°C | 125°C | 1N5819 datasheet (66K) |
| 1N5819 | 40 V, 1 A, schottky barrier rectifier | TEL | N/A | 2 | -50°C | 125°C | 1N5819 datasheet (143K) |
| 1N5819 | 40 V, 1 A, schottky barrier rectifier | TRSYS | N/A | 2 | -50°C | 125°C | 1N5819 datasheet (143K) |
| 1N5819 | Schottky barrier rectifier. Max recurrent peak reverse voltage 40V. Max RMS voltage 21V. Max DC blocking voltage 40V. Current 1.0A | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | N/A | 2 | -65°C | 125°C | 1N5819 datasheet (244K) |
| 1N5819 | 40V, 1.0A schottky barrier rectifier | WTE | N/A | 2 | -65°C | 150°C | 1N5819 datasheet (36K) |