| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| 28C256AJI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | -40°C | 85°C | 28C256AJI-3 datasheet (41K) |
| 28C256AJI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PLCC | 32 | -40°C | 85°C | 28C256AJI-4 datasheet (41K) |
| 28C256AJM-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 28C256AJM-1 datasheet (41K) |
| 28C256AJM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 28C256AJM-1 datasheet (41K) |
| 28C256AJM-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 28C256AJM-2 datasheet (41K) |
| 28C256AJM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 28C256AJM-2 datasheet (41K) |
| 28C256AJM-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 28C256AJM-3 datasheet (41K) |
| 28C256AJM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 28C256AJM-3 datasheet (41K) |
| 28C256AJM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | PLCC | 32 | -55°C | 125°C | 28C256AJM-4 datasheet (41K) |
| 28C256AJM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | PLCC | 32 | -55°C | 125°C | 28C256AJM-4 datasheet (41K) |
