| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| 28C256ASM-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 28C256ASM-1 datasheet (41K) |
| 28C256ASM-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 28C256ASM-2 datasheet (41K) |
| 28C256ASM-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 28C256ASM-2 datasheet (41K) |
| 28C256ASM-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 28C256ASM-3 datasheet (41K) |
| 28C256ASM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 28C256ASM-3 datasheet (41K) |
| 28C256ASM-4 | High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 28C256ASM-4 datasheet (41K) |
| 28C256ASM-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 28C256ASM-4 datasheet (41K) |
| 28C256ATC-1 | High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | 0°C | 70°C | 28C256ATC-1 datasheet (41K) |
| 28C256ATC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | TURBO | TSOP | 28 | 0°C | 70°C | 28C256ATC-1 datasheet (41K) |
| 28C256ATC-2 | High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | TSOP | 28 | 0°C | 70°C | 28C256ATC-2 datasheet (41K) |
