| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| 28LV256SI-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 28LV256SI-4 datasheet (41K) |
| 28LV256SI-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -40°C | 85°C | 28LV256SI-5 datasheet (41K) |
| 28LV256SI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 28LV256SI-5 datasheet (41K) |
| 28LV256SI-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -40°C | 85°C | 28LV256SI-6 datasheet (41K) |
| 28LV256SI-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | TURBO | SOIC | 28 | -40°C | 85°C | 28LV256SI-6 datasheet (41K) |
| 28LV256SM-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 28LV256SM-3 datasheet (41K) |
| 28LV256SM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 28LV256SM-3 datasheet (41K) |
| 28LV256SM-4 | Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 28LV256SM-4 datasheet (41K) |
| 28LV256SM-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | TURBO | SOIC | 28 | -55°C | 125°C | 28LV256SM-4 datasheet (41K) |
| 28LV256SM-5 | Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | TRBIC | SOIC | 28 | -55°C | 125°C | 28LV256SM-5 datasheet (41K) |
