Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
2A04 | 400 V, 2.0 A silicon rectifier | SURGE | DO | 2 | -65°C | 125°C | 2A04 datasheet (123K) |
2A04G | 400V; 2.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 150°C | 2A04G datasheet (59K) |
2A05 | 600V; 2.0A rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 150°C | 2A05 datasheet (57K) |
2A05 | 600 V, 2.0 A silicon rectifier | SURGE | DO | 2 | -65°C | 125°C | 2A05 datasheet (123K) |
2A05G | 600V; 2.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 150°C | 2A05G datasheet (59K) |
2A06 | 800V; 2.0A rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 150°C | 2A06 datasheet (57K) |
2A06 | 800 V, 2.0 A silicon rectifier | SURGE | DO | 2 | -65°C | 125°C | 2A06 datasheet (123K) |
2A06G | 800V; 2.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 150°C | 2A06G datasheet (59K) |
2A07 | 1000V; 2.0A rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 150°C | 2A07 datasheet (57K) |
2A07 | 1000 V, 2.0 A silicon rectifier | SURGE | DO | 2 | -65°C | 125°C | 2A07 datasheet (123K) |