| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| 2N3053 | 40V Vce, 0.7A Ic, 100MHz NPN bipolar transistor | Semelab-Plc- | TO39 | - | N/A | N/A | 2N3053 datasheet (17K) |
| 2N3053A | General purpose transistor | BOCA | N/A | 3 | -65°C | 200°C | 2N3053A datasheet (42K) |
| 2N3054A | 55V Vce, 4A Ic, 0.8MHz NPN bipolar transistor | Semelab-Plc- | TO66 | - | N/A | N/A | 2N3054A datasheet (15K) |
| 2N3055 | Complementary silicon power transistor | BOCA | N/A | 2 | -65°C | 200°C | 2N3055 datasheet (174K) |
| 2N3055 | Complementary silicon power transistor | MOSP | N/A | 2 | -65°C | 200°C | 2N3055 datasheet (167K) |
| 2N3055 | Complementary silicon power transistor | Motorola | N/A | 2 | -65°C | 200°C | 2N3055 datasheet (130K) |
| 2N3055 | COMPLEMENTARY SILICON POWER TRANSISTORS | SGS-Thomson-Microelectronics | N/A | - | N/A | N/A | 2N3055 datasheet (47K) |
| 2N3055 | NPN silicon power transistor. 15Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. | USHA | N/A | 3 | -65°C | 200°C | 2N3055 datasheet (48K) |
| 2N3055 | High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. | USHA | N/A | 3 | -65°C | 200°C | 2N3055 datasheet (48K) |
| 2N3055A | 60V Complementary silicon power transistor | BOCA | N/A | 2 | -65°C | 200°C | 2N3055A datasheet (200K) |
