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10A05Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 10.0 A.BYTESN/A2-65°C | 150°C10A05 datasheet (190K)
10A05600V; 10A rectifier; high current capability and low forward voltage dropDIODSN/A2-65°C | 150°C10A05 datasheet (48K)
10A0510A, 600V ultra fast recovery rectifierMCCN/A-N/A | N/A10A05 datasheet (88K)
10A06800V; 10A rectifier; high current capability and low forward voltage dropDIODSN/A2-65°C | 150°C10A06 datasheet (48K)
10A0610A, 800V ultra fast recovery rectifierMCCN/A-N/A | N/A10A06 datasheet (88K)
10A0606 W, 20 V, 1000 MHz common emitter transistorGHZ55FT3N/A | N/A10A060 datasheet (56K)
10A071000V; 10A rectifier; high current capability and low forward voltage dropDIODSN/A2-65°C | 150°C10A07 datasheet (48K)
10A0710A, 1000V ultra fast recovery rectifierMCCN/A-N/A | N/A10A07 datasheet (88K)
10A1Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 10.0 A.BYTESN/A2-65°C | 150°C10A1 datasheet (190K)
10A10Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 10.0 A.BYTESN/A2-65°C | 150°C10A10 datasheet (190K)

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