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| 1N4006G | Rectifier. Repetitive peak reverse voltage 800 V. | Philips-Semiconductors | SOD57 | 2 | -65°C | 175°C | 1N4006G datasheet (53K) |
| 1N4006G | Glass passivated junction plastic rectifier. Current 1.0A, VRRM = 800V, VRMS = 560V, VDC = 800V. | RECTR | N/A | 2 | -65°C | 175°C | 1N4006G datasheet (23K) |
| 1N4006G | Glass passivated junction rectifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 1.0 A. | SSE | N/A | 2 | -65°C | 150°C | 1N4006G datasheet (13K) |
| 1N4006G | 800V, 1.0A glass passivated rectifier | WTE | N/A | 2 | -65°C | 175°C | 1N4006G datasheet (53K) |
| 1N4006G | 800V, 1.0A glass passivated rectifier | WTE | N/A | 2 | -65°C | 175°C | 1N4006G datasheet (53K) |
| 1N4006G-T3 | 800V, 1.0A glass passivated rectifier | WTE | N/A | 2 | -65°C | 175°C | 1N4006G-T3 datasheet (53K) |
| 1N4006G-T3 | 800V, 1.0A glass passivated rectifier | WTE | N/A | 2 | -65°C | 175°C | 1N4006G-T3 datasheet (53K) |
| 1N4006G-TB | 800V, 1.0A glass passivated rectifier | WTE | N/A | 2 | -65°C | 175°C | 1N4006G-TB datasheet (53K) |
| 1N4006GL | 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | DIODS | N/A | 2 | -65°C | 150°C | 1N4006GL datasheet (60K) |
| 1N4006GL | 800V, 1.0A glass passivated rectifier | LITON | N/A | 2 | -55°C | 150°C | 1N4006GL datasheet (35K) |