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1N4384GPGlass Passivated Junction RectifierGeneral-SemiconductorN/A-N/A | N/A1N4384GP datasheet (64K)
1N4385GPGlass Passivated Junction RectifierGeneral-SemiconductorN/A-N/A | N/A1N4385GP datasheet (64K)
1N4446Signal or Computer DiodeMicrosemi-CorporationN/A-N/A | N/A1N4446 datasheet (32K)
1N4446High-speed diodesPhilips-SemiconductorsSOD27-N/A | N/A1N4446 datasheet (52K)
1N4447Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA.CNELN/A2-65°C | 175°C1N4447 datasheet (47K)
1N4447Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA.CNELN/A2-65°C | 175°C1N4447 datasheet (47K)
1N4447100 V, 150 mA, Silicon epitaxial planar diodeGODARN/A2N/A | N/A1N4447 datasheet (23K)
1N4447100 V, 150 mA, silicon epitaxial planar diodeHONEYDO2N/A | N/A1N4447 datasheet (88K)
1N4447Signal or Computer DiodeMicrosemi-CorporationN/A-N/A | N/A1N4447 datasheet (32K)
1N4448Small signal switching diode. Reverse voltage 75 V. Average rectified current 150 mA.CNELN/A2-65°C | 175°C1N4448 datasheet (190K)

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