Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
IRF1010NS | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International Rectifier | DDPak | 3 | -55°C | 175°C | IRF1010NS datasheet (146K) |
IRF1018EPBF | 60V Single N-Channel HEXFET Power MOSFET | International Rectifier | N/A | | N/A | N/A | IRF1018EPBF datasheet (430K) |
IRF1018ESLPBF
| 60V Single N-Channel HEXFET Power MOSFET | International Rectifier | N/A | | N/A | N/A | IRF1018ESLPBF
datasheet (430K) |
IRF1018ESPBF | 60V Single N-Channel HEXFET Power MOSFET | International Rectifier | N/A | | N/A | N/A | IRF1018ESPBF datasheet (430K) |
IRF1018ESTRLPBF
| 60V Single N-Channel HEXFET Power MOSFET | International Rectifier | N/A | | N/A | N/A | IRF1018ESTRLPBF
datasheet (430K) |
IRF1104 | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A. | International Rectifier | N/A | 3 | -55°C | 175°C | IRF1104 datasheet (101K) |
IRF130 | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A | International Rectifier | N/A | 3 | -55°C | 150°C | IRF130 datasheet (147K) |
IRF1302 | Power MOSFET, 20V, 180A | International Rectifier | N/A | 3 | -55°C | 175°C | IRF1302 datasheet (523K) |
IRF1302L | Power MOSFET, 20V, 174A | International Rectifier | N/A | 3 | -55°C | 175°C | IRF1302L datasheet (229K) |
IRF1302S | Power MOSFET, 20V, 174A | International Rectifier | D2PAK | 3 | -55°C | 175°C | IRF1302S datasheet (229K) |