| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| IRFI1010N | HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A | International Rectifier | N/A | 3 | -55°C | 175°C | IRFI1010N datasheet (109K) |
| IRFI1310G | HEXFET power MOSFET | International Rectifier | N/A | 3 | -55°C | 175°C | IRFI1310G datasheet (361K) |
| IRFI260 | HEXFET transistor | International Rectifier | N/A | 3 | -55°C | 150°C | IRFI260 datasheet (135K) |
| IRFI3205 | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 64 A | International Rectifier | N/A | 3 | -55°C | 175°C | IRFI3205 datasheet (107K) |
| IRFI360 | HEXFET transistor (N-channel). BVDSS = 400V, RDS(on) = 0.20 Ohm, ID = 25 A | International Rectifier | N/A | 3 | -55°C | 150°C | IRFI360 datasheet (210K) |
| IRFI460 | HEXFET transistor (N-channel). BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21 A | International Rectifier | N/A | 3 | -55°C | 150°C | IRFI460 datasheet (211K) |
| IRFI520N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 7.6 A | International Rectifier | N/A | 3 | -55°C | 175°C | IRFI520N datasheet (133K) |
| IRFI540N | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.052 Ohm, ID = 20 A | International Rectifier | N/A | 3 | -55°C | 175°C | IRFI540N datasheet (131K) |
| IRFI614G | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.1 A | International Rectifier | N/A | 3 | -55°C | 150°C | IRFI614G datasheet (173K) |
| IRFI614G | HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.1 A | International Rectifier | N/A | 3 | -55°C | 150°C | IRFI614G datasheet (173K) |
