| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| IRF530 | N-channel MOSFET, 100V, 14A | Samsung Electronic | N/A | 3 | -55°C | 150°C | IRF530 datasheet (354K) |
| IRF531 | N-channel MOSFET, 80V, 14A | Samsung Electronic | N/A | 3 | -55°C | 150°C | IRF531 datasheet (354K) |
| IRF532 | N-channel MOSFET, 100V, 12A | Samsung Electronic | N/A | 3 | -55°C | 150°C | IRF532 datasheet (354K) |
| IRF533 | N-channel MOSFET, 80V, 12A | Samsung Electronic | N/A | 3 | -55°C | 150°C | IRF533 datasheet (354K) |
| IRF720 | N-channel MOSFET, 400V, 3.3A | Samsung Electronic | N/A | 3 | -55°C | 150°C | IRF720 datasheet (273K) |
| IRF820 | N-channel MOSFET, 500V, 2.5A | Samsung Electronic | N/A | 3 | -55°C | 150°C | IRF820 datasheet (322K) |
| IRF821 | N-channel MOSFET, 450V, 2.5A | Samsung Electronic | N/A | 3 | -55°C | 150°C | IRF821 datasheet (322K) |
| IRF822 | N-channel MOSFET, 500V, 2.2A | Samsung Electronic | N/A | 3 | -55°C | 150°C | IRF822 datasheet (322K) |
| IRF823 | N-channel MOSFET, 450V, 2.2A | Samsung Electronic | N/A | 3 | -55°C | 150°C | IRF823 datasheet (322K) |
| IRF840 | N-channel HEXFET, 500V, 8A | Samsung Electronic | N/A | 3 | -55°C | 150°C | IRF840 datasheet (272K) |
