| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| 1N5387A | 190 V, 5 W silicon zener diode | EIC | D2A | 2 | -55°C | 175°C | 1N5387A datasheet (31K) |
| 1N5387A | Zener Voltage Regulator Diode | Microsemi-Corporation | N/A | - | N/A | N/A | 1N5387A datasheet (114K) |
| 1N5387B | 190 V, 5 Watt surmetic 40 silicon zener diode | BOCA | N/A | 2 | -65°C | 200°C | 1N5387B datasheet (428K) |
| 1N5387B | Silicon power Z-diode | Diotec-Elektronische | N/A | 2 | -50°C | 150°C | 1N5387B datasheet (21K) |
| 1N5387B | 190V 5W zener diode | DIODS | Molded Plastic | 2 | -55°C | 175°C | 1N5387B datasheet (63K) |
| 1N5387B | 190 V, 5 mA, 5 W glass passivated zener diode | FAGOR | N/A | 2 | -55°C | 175°C | 1N5387B datasheet (52K) |
| 1N5387B | 5 watt surmetic 40 silicon zener diode | Motorola | Plastic | 2 | -65°C | 200°C | 1N5387B datasheet (87K) |
| 1N5387B | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 190V, Izt = 5.0mA | PAJIT | N/A | 2 | -55°C | 150°C | 1N5387B datasheet (306K) |
| 1N5387B | 190 V, 5 W, glass passivated junction silicon zener diode | TEL | N/A | 2 | -55°C | 150°C | 1N5387B datasheet (267K) |
| 1N5387B | 190 V, 0.5 A, 5 W, glass passivated junction silicon zener diode | TRSYS | N/A | 2 | -55°C | 150°C | 1N5387B datasheet (267K) |
