| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| VFT300-50 | VHF power MOSFET N-channel enhancement mode | Advanced Semiconductor, Inc. | N/A | 4 | -65°C | 200°C | VFT300-50 datasheet (20K) |
| VFT45-28 | VHF power MOSFET N-channel enhancement mode | Advanced Semiconductor, Inc. | N/A | 4 | -65°C | 200°C | VFT45-28 datasheet (18K) |
| VFT5-28 | VHF power MOSFET N-channel enhancement mode | Advanced Semiconductor, Inc. | N/A | 4 | -65°C | 200°C | VFT5-28 datasheet (18K) |
| VFT5-28SL | VHF power MOSFET N-channel enhancement mode | Advanced Semiconductor, Inc. | N/A | 4 | -65°C | 200°C | VFT5-28SL datasheet (17K) |
| VFT80-28 | VHF power MOSFET N-channel enhancement mode | Advanced Semiconductor, Inc. | N/A | 4 | -65°C | 200°C | VFT80-28 datasheet (18K) |
| VHB1-12T | NPN silicon RF power transistor | Advanced Semiconductor, Inc. | N/A | 3 | -65°C | 200°C | VHB1-12T datasheet (16K) |
| VHB1-28T | NPN silicon RF power transistor | Advanced Semiconductor, Inc. | N/A | 3 | -65°C | 200°C | VHB1-28T datasheet (17K) |
| VHB10-12F | NPN silicon RF power transistor | Advanced Semiconductor, Inc. | N/A | 4 | -65°C | 200°C | VHB10-12F datasheet (17K) |
| VHB10-12S | NPN silicon RF power transistor | Advanced Semiconductor, Inc. | N/A | 4 | -65°C | 200°C | VHB10-12S datasheet (16K) |
| VHB10-28F | NPN silicon RF power transistor | Advanced Semiconductor, Inc. | N/A | 4 | -65°C | 200°C | VHB10-28F datasheet (17K) |
