| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| IRF5800 | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.085 Ohm | International Rectifier | TSOP | 6 | -55°C | 150°C | IRF5800 datasheet (98K) |
| IRF5801 | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 2.2 Ohm, ID = 0.6A | International Rectifier | TSOP | 6 | -55°C | 150°C | IRF5801 datasheet (120K) |
| IRF5803 | HEXFET power MOSFET. VDSS = -40V, RDS(on) = 112 mOhm, ID = -3.4A @ VGS = -10V, RDS(on) = 190 mOhm , ID = -2.7A @ VGS = -4.5V | International Rectifier | TSOP | 6 | -55°C | 150°C | IRF5803 datasheet (109K) |
| IRF5803D2 | FETKY MOSFET & schottky diode. VDSS = -40V, RDS(on) = 112 mOhm, schottky Vf = 0.51V | International Rectifier | SO | 8 | -55°C | 150°C | IRF5803D2 datasheet (127K) |
| IRF5804 | HEXFET power MOSFET. VDSS = -40V, RDS(on) = 198 mOhm, ID = -2.5A @ VGS = -10V, RDS(on) = 334 mOhm, ID = -2.0A @ VGS = -4.5V | International Rectifier | TSOP | 6 | -55°C | 150°C | IRF5804 datasheet (99K) |
| IRF5805 | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.098 Ohm, ID = -3.8A @ VGS = -10V, RDS(on) = 0.165 Ohm, ID = -3.0A @ VGS = -4.5V | International Rectifier | TSOP | 6 | -55°C | 150°C | IRF5805 datasheet (126K) |
| IRF5806 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 86 mOhm, ID = -4.0A @ VGS = -4.5V, RDS(on) = 147 mOhm, ID = -3.0A @ VGS = -2.5V | International Rectifier | Micro6 | 6 | -55°C | 150°C | IRF5806 datasheet (218K) |
| IRF5810 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 90 mOhm, ID = -2.9A @ VGS = -4.5V, RDS(on) = 135 mOhm, ID = -2.3A @ VGS = -2.5V | International Rectifier | TSOP | 6 | -55°C | 150°C | IRF5810 datasheet (208K) |
| IRF5850 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm | International Rectifier | TSOP | 6 | -55°C | 150°C | IRF5850 datasheet (126K) |
| IRF5851 | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm (P-Ch). VDSS = 20V, RDS(on) = 0.090 Ohm (N-Ch) | International Rectifier | TSOP | 6 | -55°C | 150°C | IRF5851 datasheet (172K) |
