| Название | Описание | Производитель | Корпус | Выводы | Темп. Диапазон | Файл PDF |
| IRC830 | HEXFET power MOSFET. Continuous drain current 4.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 1.5 Ohm | International Rectifier | N/A | 5 | -55°C | 150°C | IRC830 datasheet (222K) |
| IRC840 | HEXFET power MOSFET. Continuous drain current 8.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 0.85 Ohm | International Rectifier | N/A | 5 | -55°C | 150°C | IRC840 datasheet (220K) |
| IRCZ24 | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.040 Ohm, ID = 26A. | International Rectifier | N/A | 5 | -55°C | 175°C | IRCZ24 datasheet (145K) |
| IRCZ34 | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.050 Ohm, ID = 30A. | International Rectifier | N/A | 5 | -55°C | 175°C | IRCZ34 datasheet (130K) |
| IRCZ44 | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.028 Ohm, ID = 50A. | International Rectifier | N/A | 5 | -55°C | 175°C | IRCZ44 datasheet (132K) |
| IRF1010E | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International Rectifier | N/A | 3 | -55°C | 175°C | IRF1010E datasheet (195K) |
| IRF1010EL | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International Rectifier | N/A | 3 | -55°C | 175°C | IRF1010EL datasheet (123K) |
| IRF1010ES | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. | International Rectifier | DDPak | 3 | -55°C | 175°C | IRF1010ES datasheet (123K) |
| IRF1010N | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International Rectifier | N/A | 3 | -55°C | 175°C | IRF1010N datasheet (211K) |
| IRF1010NL | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International Rectifier | N/A | 3 | -55°C | 175°C | IRF1010NL datasheet (146K) |
